Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

V. Mortet (1) , Eléna Bedel-Pereira (2) , Jean-François Bobo (3) , Fuccio Cristiano (2) , Christian Strenger (4) , V. Uhnevionak , A. Burenkov , A.J. J Bauer

1 FZU / CAS - Institute of Physics of the Czech Academy of Sciences
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
3 CEMES - Centre d'élaboration de matériaux et d'études structurales
4 Fraunhofer IIS - Fraunhofer Institute for Integrated Circuits

Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10 13 cm-2 with a peak Hall mobility of 42.4 cm 2 .V-1 .s-1. Coulomb scattering as dominant scattering mechanism up to room temperature is demonstrated using temperature dependent MOS-Hall effect characterization.

Mots clés: 4H-SiC; MOSFET; Hall effect; Hall mobility; charge carrier density; Coulomb scattering; nitrogen implantation

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]; Sciences de l'ingénieur [physics]; Matériaux; Micro et nanotechnologies/Microélectronique

V. Mortet, Eléna Bedel-Pereira, Jean-François Bobo, Fuccio Cristiano, Christian Strenger, et al.. Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation. Materials Science Forum, 2013, 740-742, pp.525 - 528. ⟨10.4028/www.scientific.net/msf.740-742.525⟩. ⟨hal-01921860⟩