Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si

Cloud Nyamhere (1) , Fuccio Cristiano (1) , François Olivie (1) , Z. Essa (2, 1) , Eléna Bedel-Pereira (1) , D Bolze , Y Yamamoto

1 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
2 ST-CROLLES - STMicroelectronics [Crolles]

In this work, we focused on the analysis of implantation-induced defects, mainly small interstitial clusters (ICs) and {311} defects introduced in n-type Si after ion implantation using deep level transient spectroscopy (DLTS). Silicon ions (at 160 keV or 190 keV) of fluences ranging from (0.1-8.0) Â 10 13 cm À2 have been implanted into n-type Si and annealed at temperatures between 500 C and 800 C specifically to create small ICs or {311}s rod-like defects. In samples dominated by small ICs, DLTS spectra show prominent deep levels at Ec À 0.24 eV and Ec À 0.54 eV. After increasing the fluence and temperature, i.e., reducing the number of small ICs and forming {311} defects, the peak Ec À 0.54 eV is still dominant while other electron traps Ec À 0.26 eV and Ec À 0.46 eV are introduced. There were no observable deep levels in reference, non-implanted samples. The identity and origin of all these traps are interpreted in conjunction with recently developed predictive defect simulation models. V C 2013 AIP Publishing LLC.

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]; Sciences de l'ingénieur [physics]; Matériaux; Micro et nanotechnologies/Microélectronique

Cloud Nyamhere, Fuccio Cristiano, François Olivie, Z. Essa, Eléna Bedel-Pereira, et al.. Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si. Journal of Applied Physics, 2013, 113 (18), pp.184508. ⟨hal-01921870⟩