Cross Kelvin force microscopy and conductive atomic force microscopy studies of organic bulk heterojunction blends for local morphology and electrical behavior analysis

Abstract : Bulk Heterojunction (BHJ) organic photovoltaic devices performances depend on the relative organization and physical properties of the electron-donor and -acceptor materials. In this paper, BHJs of poly(3-hexyl-thiophene) (P3HT) associated with an electron acceptor material, 1-(3-methoxycarbonyl)-propyl-1-phenyl[6,6]C6 (PCBM) or [Ni(4dodpedt)(2)], are studied in terms of morphology, ordering, and electrical properties. First, comparison between the two BHJs performed by Atomic Force Microscopy (AFM) and Raman characterizations shows that P3HT structuration is improved by blending with [Ni(4dodpedt)(2)]. Then, the relationship between charges trapping, electrical properties, and film morphology is investigated using conductive AFM and Kelvin Force Microscopy. Measurements in dark condition and under solar cell simulator provide complementary information on electrical phenomena in these organic nanostructures. Finally, time dependent measurement highlights the influence of charges stacking on conduction. Specifically, we demonstrate that charge accumulation initiated by illumination remains valid after switching off the light, and induces the modification in current versus voltage characteristic of P3HT: PCBM blend. Finally, we observe a current increasing which can be attributed to the energy barrier decreasing due to charges trapping in PCBM. (C) 2015 AIP Publishing LLC.
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https://hal.archives-ouvertes.fr/hal-01923822
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Submitted on : Thursday, November 15, 2018 - 2:47:52 PM
Last modification on : Tuesday, November 5, 2019 - 2:22:08 PM

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C. Villeneuve-Faure, D. Le Borgne, Kathleen I. Moineau-Chane Ching, Eléna Bedel-Pereira, D. Hernandez-Maldonado, et al.. Cross Kelvin force microscopy and conductive atomic force microscopy studies of organic bulk heterojunction blends for local morphology and electrical behavior analysis. Journal of Applied Physics, American Institute of Physics, 2015, 117 (5), pp.055501/1-9. ⟨10.1063/1.4907213⟩. ⟨hal-01923822⟩

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