Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

Sawsen Azaizia (1) , Andrea Balocchi (1) , Simone Mazzucato (1) , Fabian Cadiz (1) , S Beato de Le Salle (1) , Henri Lehec (1) , David Lagarde (1) , Alexandre Arnoult (2) , Thierry Amand (1) , Chantal Fontaine (3) , Xavier Marie (1) , Hélène Carrère (1)

1 LPCNO - Laboratoire de physique et chimie des nano-objets
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
3 LAAS-PHOTO - Équipe Photonique

Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%–3.8% and quantum wells with bismuth fractions in the range 2.4%–7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Matériaux; Optique / photonique

Sawsen Azaizia, Andrea Balocchi, Simone Mazzucato, Fabian Cadiz, S Beato de Le Salle, et al.. Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures. Semiconductor Science and Technology, 2018, 33 (11), pp.114013. ⟨10.1088/1361-6641/aae354⟩. ⟨hal-01944345⟩