DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

Raul Perez Rodriguez (1) , Benito González (1) , Javier Garcia (1) , Gaëtan Toulon (2) , Frédéric Morancho (2) , Antonio Núñez (1)

1 Instituto Universitario de Microelectrónica Aplicada
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

A DC leakage current model accounting for trapping effects under the gate of AlGaN/GaN HEMTs on silicon has been developed. Based on TCAD numerical simulations (with Sentaurus Device), non-local tunneling under the Schottky gate is necessary to reproduce the measured transfer characteristics in a subthreshold regime. Once the trap concentration and distribution are determined in the device, the resulting gate leakage current is modeled making use of Verilog-A, for typical operation regimes.

Mots clés: AlGaN/GaN HEMT; gate leakage current; traps; numerical simulation; modeling

Domaines: Electronique

Raul Perez Rodriguez, Benito González, Javier Garcia, Gaëtan Toulon, Frédéric Morancho, et al.. DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs. Electronics, 2018, 7 (10), pp.210. ⟨10.3390/electronics7100210⟩. ⟨hal-01955666⟩