Characteristics of zirconium and niobium contacts on boron-doped diamond

M. Davydova (1) , A. Taylor (1) , P. Hubík (2, 1) , L. Fekete (3, 1) , L. Klimša (1) , David Trémouilles (4) , A. Soltani (5, 6, 7) , Vincent Mortet (1)

1 CAS - Czech Academy of Sciences [Prague]
2 FZU / CAS - Institute of Physics of the Czech Academy of Sciences
3 Institute of Physics
4 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
5 UdeS - Université de Sherbrooke
6 LN2 - Laboratoire Nanotechnologies Nanosystèmes
7 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]

Formation of ohmic contacts on boron-doped diamond using zirconium and niobium has been studied in comparison to the commonly used titanium or tantalum contacts. Metal contacts were fabricated using standard micro-fabrication technologies on epitaxial layers with different boron concentrations. Room temperature specific contact resistance was determined using the circular Transmission Line Model after annealing at various temperatures. The specific contact resistance varies considerably with boron concentration and annealing temperature. Zirconium and niobium form ohmic contacts on highly boron-doped diamond after high-temperature annealing with a specific contact resistance comparable to that of titanium and tantalum contacts. Furthermore, we observed zirconium contacts showed better thermal stability upon high-temperature annealing compared to titanium and other metal contacts. These results emphasize the potential of zirconium for the formation of ohmic contacts on boron-doped diamond.

Mots clés: circular transmission line model; boron-doped diamond; Ohmic contact; titanium; niobium; zirconium

Domaines: Micro et nanotechnologies/Microélectronique

M. Davydova, A. Taylor, P. Hubík, L. Fekete, L. Klimša, et al.. Characteristics of zirconium and niobium contacts on boron-doped diamond. Diamond and Related Materials, 2018, 83, pp.184-189. ⟨10.1016/j.diamond.2018.02.009⟩. ⟨hal-01956850⟩