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Journal articles
Room temperature current modulation in large area electronic junctions of spin crossover thin films
Victoria Shalabaeva
1, 2
Karl Ridier
1, 2
Sylvain Rat
1, 2
Maria Dolores Manrique-Juarez
1, 2
L. Salmon
1
Isabelle Séguy
3
A. Rotaru
4, 5
G. Molnar
1
Azzedine Bousseksou
1
3
LAAS-MICA - Équipe MICrosystèmes d'Analyse
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Victoria Shalabaeva 1, 2
Author
Karl Ridier 1, 2
Author
Sylvain Rat 1, 2
Author
Maria Dolores Manrique-Juarez 1, 2
Author IdHAL : maria-dolores-manrique-juarez
L. Salmon 1
Author IdHAL : lionel-salmon ORCID : https://orcid.org/0000-0002-8064-8960 ResearcherId : http://www.researcherid.com/rid/C-9909-2015 IdRef : https://www.idref.fr/167827618
Isabelle Séguy 3
Author IdHAL : isabelle-seguy
A. Rotaru 4, 5
Author
G. Molnar 1
Author IdHAL : gabor-molnar ResearcherId : http://www.researcherid.com/rid/Q-6874-2016 ORCID : https://orcid.org/0000-0001-6032-6393
Azzedine Bousseksou 1
Author IdHAL : azzedine-bousseksou
1
LCC - Laboratoire de chimie de coordination (205 Route de Narbonne 31077 TOULOUSE CEDEX 4 - France)
- ICT-FR 2599 - Institut de Chimie de Toulouse (118 Route de Narbonne 31062 Toulouse cédex 9 - France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- IRD - Institut de Recherche pour le Développement (Siège Le Sextant 44, bd de Dunkerque CS 90009 13572 Marseille cedex 02 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : FR2599 (France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : UPR8241 (France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
2
UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
3
LAAS-MICA - Équipe MICrosystèmes d'Analyse (France)
- LAAS - Laboratoire d'analyse et d'architecture des systèmes (7 Av du colonel Roche 31077 TOULOUSE CEDEX 4 - France)
- UT1 - Université Toulouse 1 Capitole (2 rue du Doyen-Gabriel-Marty - 31042 Toulouse Cedex 9 - France)
- INSA Toulouse - Institut National des Sciences Appliquées - Toulouse (135, avenue de Rangueil - 31077 Toulouse cedex 4 - France)
- UT2J - Université Toulouse - Jean Jaurès (5 allées Antonio Machado - 31058 Toulouse Cedex 9 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : UPR8001 (France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
4
Faculty of Electrical Engineering and Computer Science [Suceava] (Romania)
- USU - Universitatea Stefan cel Mare Suceava (Str. Universitatii 13, 720229 Suceava, Romania - Romania)
5
MANSiD Research Center [Suceava] (Suceava 720229, Romania - Romania)
- USU - Universitatea Stefan cel Mare Suceava (Str. Universitatii 13, 720229 Suceava, Romania - Romania)
Abstract : We report large-area (∼3 mm2), pinhole free crossbar junctions of thin films of the mol. complex [Fe(HB(tz)3)2] displaying spin transition around 336 K. The charge transport in the thinner junctions (10 and 30 nm) occurs by a tunneling mechanism, which is not affected substantially by the spin transition. The thicker junctions (100 and 200 nm) exhibit rectifying behavior and a reproducible drop of their elec. resistance by ca. 65-80% when switching the mols. from the high-spin to the low-spin state. This current modulation is ascribed to a bulk-limited charge transport mechanism via a thermally activated hopping process. The demonstrated possibility of resistance switching in ambient conditions provides appealing prospects for the implementation of mol. spin crossover materials in electronic and spintronic devices.
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Journal articles
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https://hal.archives-ouvertes.fr/hal-01961778
Contributor : Marie-Hélène Gulli <>
Submitted on : Thursday, December 20, 2018 - 10:58:08 AM
Last modification on : Friday, February 19, 2021 - 5:24:04 PM
Contributor : Marie-Hélène Gulli <>
Submitted on : Thursday, December 20, 2018 - 10:58:08 AM
Last modification on : Friday, February 19, 2021 - 5:24:04 PM
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- HAL Id : hal-01961778, version 1
- DOI : 10.1063/1.5017458
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LCC | CNRS | INC-CNRS | INSA-TOULOUSE | LAAS | INSA-GROUPE | LAAS-MICA | LAAS-MICRO-NANO-BIO-TECHNOLOGIES | UNIV-TLSE3 | UT1-CAPITOLE | UNIV-TLSE2
Citation
Victoria Shalabaeva, Karl Ridier, Sylvain Rat, Maria Dolores Manrique-Juarez, L. Salmon, et al.. Room temperature current modulation in large area electronic junctions of spin crossover thin films. Applied Physics Letters, American Institute of Physics, 2018, 112 (1), pp.013301/1-013301/5. ⟨10.1063/1.5017458⟩. ⟨hal-01961778⟩
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