Hole spin injection from a GaMnAs layer into GaAs–AlAs–InGaAs resonant tunneling diodes

D Rodrigues , M Brasil , M. Orlita (1) , J. Kunc (2) , H. Galeti (3) , M. Henini (4) , D Taylor , Y Galvão Gobato

1 LNCMI-G - Laboratoire national des champs magnétiques intenses - Grenoble
2 School of Physics [Atlanta]
3 UFSCar - Universidade Federal de São Carlos [São Carlos]
4 UON - University of Nottingham, UK

Domaines: Physique [physics]; Matière Condensée [cond-mat]

D Rodrigues, M Brasil, M. Orlita, J. Kunc, H. Galeti, et al.. Hole spin injection from a GaMnAs layer into GaAs–AlAs–InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 2016, 49 (16), pp.165104. ⟨10.1088/0022-3727/49/16/165104⟩. ⟨hal-01992701⟩