Co - Fe - B / Mg O / Ge Spin Photodiode Operating at Telecommunication Wavelength with Zero Applied Magnetic Field - Université Toulouse III - Paul Sabatier - Toulouse INP Accéder directement au contenu
Article Dans Une Revue Physical Review Applied Année : 2018

Co - Fe - B / Mg O / Ge Spin Photodiode Operating at Telecommunication Wavelength with Zero Applied Magnetic Field

Mathieu Stoffel
Xue Gao
  • Fonction : Auteur
Xavier Devaux
Sylvie Migot
Hervé Rinnert
Stéphane Mangin
Yuan Lu

Résumé

We report on the growth and study of Co-Fe-B/MgO/Ge(001) spin photodiode by using a combination of both molecular beam epitaxy (MBE) and sputtering methods. An epitaxial growth of MgO on Ge in MBE is achieved by the deposition of MgO at room temperature (RT) followed by a post-growth anneal-ing at 300 °C. The spin detector, which consists of 1.1-nm ultrathin Co-Fe-B layer capped with 5-nm Ta is subsequently grown by sputtering at RT. After a post-growth annealing of the whole structure at 250 °C, we obtain clear evidence of a strong perpendicular magnetic anisotropy in the temperature range 10-300 K. Co-Fe-B/MgO/Ge(001) heterojunctions are then processed into spin photodiodes demonstrating at zero magnetic field a photocurrent helicity asymmetry of about 0.9% at 9 K and 0.1% at RT at the telecommunication wavelength of 1310 nm. The demonstration of a spin photodiode working at a telecommunication wavelength with zero applied magnetic field is of great interest for future applications of the optical transport of spin information.
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Dates et versions

hal-02011620 , version 1 (08-02-2019)

Identifiants

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Abdelhak Djeffal, Fabian Cadiz, Mathieu Stoffel, Delphine Lagarde, Xue Gao, et al.. Co - Fe - B / Mg O / Ge Spin Photodiode Operating at Telecommunication Wavelength with Zero Applied Magnetic Field. Physical Review Applied, 2018, 10 (4), ⟨10.1103/physrevapplied.10.044049⟩. ⟨hal-02011620⟩
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