Low-temperature characterization of Hall and effective mobility in junctionless transistors

Min-Kyu Joo (1, 2) , Mireille Mouis (1) , Benjamin Piot (3) , Sylvain Barraud (4) , Minju Shin (1, 2) , Gyu-Tae Kim (5) , Gérard Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 School of Electrical Engineering [Korea University]
3 LNCMI-G - Laboratoire national des champs magnétiques intenses - Grenoble
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
5 Korea University [Seoul]

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ Eff ) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s ) and corresponding Hall mobility (μ Hall ) Hall Effect measurements were carried out and compared to μ Eff .

Mots clés: Split CV measurement; Junctionless transistor; Hall Effect measurement; Flat-band voltage; Mobility

Domaines: Micro et nanotechnologies/Microélectronique

Min-Kyu Joo, Mireille Mouis, Benjamin Piot, Sylvain Barraud, Minju Shin, et al.. Low-temperature characterization of Hall and effective mobility in junctionless transistors. 2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.85-88, ⟨10.1109/WOLTE.2014.6881032⟩. ⟨hal-02016510⟩