Solution layer deposition: A technique for the growth of ultra-pure manganese oxides on silica at room temperature

Jérémy Cure (1, 2) , Kilian Piettre (1, 2) , Yannick Coppel (1) , Eric Beche (3) , Jérôme Esvan (4) , Vincent Collière (1) , Bruno Chaudret (5) , Pierre Fau (1)

1 LCC - Laboratoire de chimie de coordination
2 STMicroelectronics
3 PROMES - Procédés, Matériaux et Energie Solaire
4 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux
5 LPCNO - Laboratoire de physique et chimie des nano-objets

With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high-purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid-state 29Si MAS NMR, XPS, SIMS, and HRTEM.

Mots clés: Synthesis; MgO on; Silica; Layer deposition

Domaines: Matériaux

Jérémy Cure, Kilian Piettre, Yannick Coppel, Eric Beche, Jérôme Esvan, et al.. Solution layer deposition: A technique for the growth of ultra-pure manganese oxides on silica at room temperature. Angewandte Chemie International Edition, 2016, 55 (9), pp.3027-3030. ⟨10.1002/anie.201509715⟩. ⟨hal-01565099⟩