Electron spin dynamics and g-factor in GaAsBi

Simone Mazzucato (1) , Tiantian Zhang (1) , Hélène Carrère (1) , David Lagarde (1) , Poonyasiri Boonpeng (2) , Alexandre Arnoult (3) , Guy Lacoste (3) , Andrea Balocchi (1) , Thierry Amand (1) , Chantal Fontaine (2) , Xavier Marie (1)

1 LPCNO - Laboratoire de physique et chimie des nano-objets
2 LAAS-PHOTO - Équipe Photonique
3 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique

Electron spin dynamics in elastically strained bulk GaAsBi epilayer with 2.2% Bi concentration has been measured by time resolved photoluminescence spectroscopy. Under external transverse magnetic field, the measurement of the photoluminescence polarization oscillations resulting from the Larmor precession of electron spins yields an accurate determination of the Landé g-factor. We find that the value of g increases from −0.81 to −0.68 when the temperature rises from T = 100 K to T = 300 K. This is typically double the value of GaAs, in agreement with the larger spin-orbit interaction in GaAsBi. In this temperature range, the electron spin lifetime decreases from 370 to 100 ps.

Mots clés: Nanomaterials Band gap Time-resolved photoluminescence spectroscopy; Electronic transport; G factor; Larmor precession; Electronic bandstructure; Spin-orbit interactions; Spintronic devices; Chemical elements

Domaines: Chimie

Simone Mazzucato, Tiantian Zhang, Hélène Carrère, David Lagarde, Poonyasiri Boonpeng, et al.. Electron spin dynamics and g-factor in GaAsBi. Applied Physics Letters, 2013, 102 (25), pp.252107. ⟨10.1063/1.4812660⟩. ⟨hal-02050545⟩