Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Cédric Robert Robert (1) , Thanh Tra Nguyen (1) , Antoine Létoublon (1) , Mathieu Perrin (1) , C. Cornet , Christophe Levallois (1) , Jean-Marc Jancu (1) , Jacky Even , Pascal Turban (2) , Andrea Balocchi (3) , Xavier Marie (3) , Olivier Durand (1) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 IPR - Institut de Physique de Rennes
3 LPCNO - Laboratoire de physique et chimie des nano-objets

AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments.

Mots clés: Ellipsometry; X-ray diffraction; Quantum dots; Laser; Photonics on silicon

Domaines: Optique [physics.optics]

Cédric Robert Robert, Thanh Tra Nguyen, Antoine Létoublon, Mathieu Perrin, C. Cornet, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications. Thin Solid Films, 2013, 541, pp.87-91. ⟨hal-02050606⟩