Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Hui Cai (1) , Bin Chen (1) , Gang Wang (2) , Emmanuel Soignard (3) , Afsaneh Khosravi (1) , Marco Manca (2) , Xavier Marie (2) , Shery Chang (3) , Bernhard Urbaszek (2) , Sefaattin Tongay (1)

1 ASU - School for Engineering of Matter, Transport and Energy
2 LPCNO - Laboratoire de physique et chimie des nano-objets
3 LeRoy Eyring Center for Solid State Science

A new member of the layered pseudo‐1D material family—monoclinic gallium telluride (GaTe)—is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.

Mots clés: gallium telluride; physical vapor transport; pseudo‐1D materials

Domaines: Chimie; Optique [physics.optics]

Hui Cai, Bin Chen, Gang Wang, Emmanuel Soignard, Afsaneh Khosravi, et al.. Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy. Advanced Materials, 2017, 29 (8), pp.1605551. ⟨hal-02053986⟩