Two-dimensional semiconductors in the regime of strong light-matter coupling - Université Toulouse III - Paul Sabatier - Toulouse INP Accéder directement au contenu
Article Dans Une Revue Nature Communications Année : 2018

Two-dimensional semiconductors in the regime of strong light-matter coupling

Résumé

The optical properties of transition metal dichalcogenide monolayers are widely dominated by excitons, Coulomb-bound electron–hole pairs. These quasi-particles exhibit giant oscillator strength and give rise to narrow-band, well-pronounced optical transitions, which can be brought into resonance with electromagnetic fields in microcavities and plasmonic nanostructures. Due to the atomic thinness and robustness of the monolayers, their integration in van der Waals heterostructures provides unique opportunities for engineering strong light-matter coupling. We review first results in this emerging field and outline future opportunities and challenges.
Fichier principal
Vignette du fichier
s41467-018-04866-6.pdf (1.3 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-02057649 , version 1 (16-05-2019)

Identifiants

Citer

Christian Schneider, Mikhail Glazov, Tobias Korn, Sven Höfling, Bernhard Urbaszek. Two-dimensional semiconductors in the regime of strong light-matter coupling. Nature Communications, 2018, 9 (1), ⟨10.1038/s41467-018-04866-6⟩. ⟨hal-02057649⟩
261 Consultations
159 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More