Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Séraphin Dieudonné Nsele (1) , Laurent Escotte (2, 1) , Jean-Guy Tartarin (3, 1) , S. Piotrowicz (4) , S. L Delage (4)

1 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 UT3 - Université Toulouse III - Paul Sabatier
4 III-V Lab - Alcatel-Thalès III-V lab

We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-Frenkel emission at low reverse bias and Fowler-Nordheim tunneling at high electric field. Several useful physical parameters are extracted from a gate leakage model including polarizations-induced field. The gate noise fluctuations are dominated by trapping-detrapping processes including discrete traps and two continuums of traps with distributed time constants. Burst noise with several levels and time constant values is also observed in these structures. Low-frequency noise measurements confirm the presence of field-assisted emission from trap states. The 1/f noise model of McWorther is used to explain the 1/f-like noise behavior in a restricted frequency range.

Domaines: Micro et nanotechnologies/Microélectronique; Electronique; Electromagnétisme

Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, S. Piotrowicz, S. L Delage. Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures. Applied Physics Letters, 2014, 105 (19), pp.192105. ⟨10.1063/1.4901906⟩. ⟨hal-02088149⟩