Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

Anne Ponchet (1) , Laurent Pedesseau (2) , Alain Le Corre (2) , Charles Cornet (2) , Nicolas Bertru (2)

1 CEMES-SINanO - Surfaces, Interfaces et Nano-Objets
2 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON

The shape of InAs nanostructures formed by molecular beam epitaxy on a (001) InP substrate in the Stranski-Krastanow growth mode is studied. A transition from wires to round-shaped islands is observed as a function of the amount of InAs deposited. It is attributed to the non-equivalent energies of the A and B facets existing in zinc blende materials (facets along [1-10] and [110], respectively). This surface energy anisotropy is considered to determine the nanostructure equilibrium shape from the balance between the elastic energy and the surface energy. At low volumes, the most energetically favorable shape is the wire-like shape, while at high volumes, the equilibrium shape is the island-like shape. The calculated sizes for which the shape changes are in good agreement with experimental sizes. The low lattice mismatch and the low surface energy of (114)A InAs facets around 41 meV/A2, as obtained from density functional theory calculations, enhance this effect in the InAs/InP system.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Matériaux; Micro et nanotechnologies/Microélectronique; Optique / photonique

Anne Ponchet, Laurent Pedesseau, Alain Le Corre, Charles Cornet, Nicolas Bertru. Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate. Applied Physics Letters, 2019, 114 (17), pp.173102. ⟨10.1063/1.5091058⟩. ⟨hal-02119035⟩