Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode

Dominique Planson (1, 2) , Besar Asllani (1, 2) , Hassan Hamad (1, 2) , Marie-Laure Locatelli (3) , Lumei Wei (4) , Christophe Raynaud (1, 2) , Pascal Bevilacqua (1, 2) , L V Phung (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie
4 LAPLACE - LAboratoire PLasma et Conversion d'Energie

This paper presents OBIC measurements performed at near breakdown voltage on two devices with different JTE doses. Overcurrent has been measured either at the JTE periphery or at the P+ border. Such overcurrent is present due to the electric field enhancement near the breakdown voltage. This hypothesis is proved by the electroluminescence. TCAD simulation of two different JTE doses yielded similar results to the OBIC measurements.

Domaines: Energie électrique

Dominique Planson, Besar Asllani, Hassan Hamad, Marie-Laure Locatelli, Lumei Wei, et al.. Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4. ⟨hal-02138767⟩