New Technological advances for microshielded coplanar circuits on silicon

Abstract : An advanced technological process for microwave coplanar circuits on silicon oxide/nitride membrane is presented. This process allows to make thick conductors with high geometric definition. Furthermore, it permits to realise microshielded circuits with minimised losses in the access ports.
Complete list of metadatas

Cited literature [6 references]  Display  Hide  Download

https://hal.laas.fr/hal-02170319
Contributor : Philippe Menini <>
Submitted on : Monday, July 1, 2019 - 6:22:54 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM

File

MME99.pdf
Files produced by the author(s)

Identifiers

  • HAL Id : hal-02170319, version 1

Citation

E Saint Etienne, G Blasquez, Patrick Pons, Robert Plana, C Douziech, et al.. New Technological advances for microshielded coplanar circuits on silicon. Micro Mechanics Europe (MME1999), Sep 1999, Gif-sur-Yvette, France. pp.109-111. ⟨hal-02170319⟩

Share

Metrics

Record views

32

Files downloads

14