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Conference papers
Ga doped ZnO thin films deposited by RF sputtering for NO2 sensing
Abstract : Ga doped ZnO thin films have been deposited by Radio-Frequency (RF) magnetron sputtering on fused silica substrates. The structural analysis of the n-type sensitive material showed a preferential orientation in the [00l] direction. The microstructure of the thin film indicated an increasing grain size with the increase of the thicknesses. The micro sensor platforms have been fabricated with ZnO:Ga thin film deposited using a reliable stencil mask onto interdigitated electrodes containing micro-hotplates. The as fabricated micro sensor allows to sense sub-ppm concentration (500 ppb) of nitric dioxide. This system reveals promising sensing performance with a sensitivity Rg/Ra up to 75 at low temperature (50 °C).
Cited literature [22 references]
https://hal.laas.fr/hal-02172260
Contributor : Philippe Menini <>
Submitted on : Monday, July 15, 2019 - 6:47:54 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM
Contributor : Philippe Menini <>
Submitted on : Monday, July 15, 2019 - 6:47:54 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM
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