Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation

François Boige (1) , Frédéric Richardeau (2)

1 LAPLACE - LAboratoire PLasma et Conversion d'Energie
2 LAPLACE-CS - Convertisseurs Statiques

The purpose of this paper is to present a complete analysis of the gate leakage-current behaviour during short-circuit (SC) fault operation of 1200V SiC MOSFETs from five different manufacturers including planar and trench-gate structures. Ruggedness and gate leakage level are evaluated in function of the chip size. Finally, the gate leakage current is modelled and the robustness tested.

Domaines: Energie électrique; Electronique

François Boige, Frédéric Richardeau. Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectronics Reliability, 2017, 76-77, pp.532-538. ⟨10.1016/j.microrel.2017.06.084⟩. ⟨hal-02180620⟩