Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls

Adem Lale (1) , Abdelhakim Bourennane (1) , Frédéric Richardeau (2) , Hakim Tahir (1)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAPLACE-CS - Convertisseurs Statiques

This paper is within the context of mixed monolithic/hybrid integrationof a generic multi-phase power converter (DC/AC or AC/DC). The technological results provided in this paper deal with the realization of a 300m deep P+wallas well as with the realization ofthe monolithic 2-phase rectifier that consistsof four verticalPiN diodes that are separatedby P+walls.These technological results are currently in use for the realization of a three terminal common cathode chip consisting of two RC-IGBTs as well as a monolithic H-bridge converter that consists of four RC-IGBTs.

Domaines: Energie électrique; Electronique

Adem Lale, Abdelhakim Bourennane, Frédéric Richardeau, Hakim Tahir. Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls. 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia. ⟨hal-02180828⟩