Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering

Lionel Presmanes; V Gunasekaran; Yohann Thimont; I Sinnarasa; Antoine Barnabe; Philippe Tailhades; Frédéric Blanc; Chabane Talhi; Philippe Menini

doi:10.3390/proceedings2019014048

Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering

Lionel Presmanes ¹ V Gunasekaran ¹ Yohann Thimont ¹ I Sinnarasa ¹ Antoine Barnabe ¹ Philippe Tailhades ¹ Frédéric Blanc ² Chabane Talhi ² Philippe Menini ³

1 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

2 LAAS-I2C - Service Instrumentation Conception Caractérisation

LAAS - Laboratoire d'analyse et d'architecture des systèmes

3 LAAS-MICA - Équipe MICrosystèmes d'Analyse

LAAS - Laboratoire d'analyse et d'architecture des systèmes

Abstract : In this work Ga doped ZnO thin films have been deposited by RF magnetron sputtering onto a silicon micro-hotplate and their structural, microstructural and gas sensing properties have been studied. ZnO:Ga thin film with a thickness of 90 nm has been deposited onto a silicon based micro-hotplates without any photolithography process thanks to a low cost and reliable stencil mask process. Sub-ppm sensing (500 ppb) of NO2 gas at low temperature (50 °C) has been obtained with promising responses R/R0 up to 18. Micro-hotplates have been prepared using photolithographic process. The system is composed by a heating element and sensing electrodes. They are both integrated in membrane in order to have a localized heating and sensing spot onto which the sensitive thin film is deposited. The microhotplates can operate with low consumption and can heat up to 500 °C with a good stability. This system has been already published in [1]. The use of lift-off process to restrict the deposition of the thin film onto central electrodes can lead to the dissolution and/or contamination of the sensitive layer. That's why the photolithographic method was avoided and a stencil mask process was used.

Keywords : NO2 sensor ZnO:Ga thin film

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Complete list of metadatas

https://hal.laas.fr/hal-02192689
Contributor : Philippe Menini <>
Submitted on : Wednesday, July 24, 2019 - 9:52:07 AM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM

GSSMO_Presmanes_2019-auteur.pd...

Files produced by the author(s)

Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering

File

Identifiers

Collections

Citation

Export

Metrics

79

59

CONTACT

Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering

File

Identifiers

Collections

Citation

Export

Share

Metrics

79

59

CONTACT