Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Tasnia Hossain (1) , Mohammad Junaebur Rashid (1) , Eric Frayssinet (1) , Nicolas Baron (1) , Benjamin Damilano (1) , Fabrice Semond (1) , J. Wang (2) , Lise Durand (3) , Anne Ponchet (2) , François Demangeot (2) , Yvon Cordier (1)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 CEMES-SINanO - Surfaces, Interfaces et Nano-Objets
3 CEMES - Centre d'élaboration de matériaux et d'études structurales

In this work, crack statistics are developed for MOCVD-grown 12 μm thick GaN on patterned Si substrate for different sizes, trench widths and trench heights of the mesas. Optical microscope is used to obtain the percentage of cracked mesas in order to develop the crack statistics. The crack statistics show that the size and the trench height of the mesas have large effects on the percentage of cracked mesas but the trench width has no significant effect. The stress on crack-free thick GaN mesas is investigated by micro-Raman scattering process at room temperature by varying the size, trench height and trench width of the mesas. Both crack statistics and stress measurement show the similar behavior while varying these features of the mesas. According to Raman analysis, the critical stress for cracking of 12 μm GaN films is about 1.8 GPa.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Matériaux

Tasnia Hossain, Mohammad Junaebur Rashid, Eric Frayssinet, Nicolas Baron, Benjamin Damilano, et al.. Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate. physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩. ⟨hal-01871066⟩