Global electro-thermal modelling and circuit-type simulation of SiC Mosfet power devices in short-circuit operation for critical system analysis

François Boige (1, 2) , Frédéric Richardeau (1) , Stéphane Lefebvre (3, 4)

1 LAPLACE-CS - Convertisseurs Statiques
2 CNRS - Centre National de la Recherche Scientifique
3 CNAM Paris - Centre d'enseignement Cnam Paris
4 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie

The purpose of this paper is to present, for the first time, a global transient electrothermal model and simulation results of commercially recent silicon carbide (SiC) power MOSFET devices. The developed models aim is faithfully transposing specifically experimental short-circuit (SC) behaviour of the studied components, ready-to-use for the analysis of an inverter-leg malfunctioning. After extensive experimentation, a thermal model of the SiC die allows to develop models of gate-leakage current and drain-source current during SC. After verifying the robustness of the proposed models, an original circuit-type with an easy implementation is performed using a commercial circuit simulation tool.

Mots clés: electrothermal simulation; model validation; MOSFET; short-circuit; silicon carbide; electrothermal simulation

Domaines: Energie électrique

François Boige, Frédéric Richardeau, Stéphane Lefebvre. Global electro-thermal modelling and circuit-type simulation of SiC Mosfet power devices in short-circuit operation for critical system analysis. ELECTRIMACS 2017, Jul 2017, Toulouse, France. ⟨hal-02336868⟩