175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction

Cédric Masante (1) , Julien Pernot (1) , Juliette Letellier (1) , David Eon (1) , Nicolas C. Rouger (2)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 LAPLACE-CS - Convertisseurs Statiques

A diamond MOSFET has been fabricated and characterized up to 250°C. The fabrication process has been improved in order to significantly reduce the specific on resistance, down to 50 mΩ.cm², and the gate leakage current at high temperature. The maximum electrical field in diamond, at the breakdown value of 175V, is estimated to be higher than 5.4 MV/cm, with a boron doping of 2×10 17 cm-3 .

Mots clés: Diamond; wide band gap; MOSFET; D3MOSFET; deep depletion

Domaines: Micro et nanotechnologies/Microélectronique; Energie électrique

Cédric Masante, Julien Pernot, Juliette Letellier, David Eon, Nicolas C. Rouger. 175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩. ⟨hal-02377367⟩