Self-aligned and stray-field-free electrodes for spintronics: An application to a spin field effect transistor

Pascal Gallo (1) , Alexandre Arnoult (2) , Thierry Camps (1) , E. Havard (1) , Chantal Fontaine (1) , L. Lombez (3) , Thierry Amand (3) , Xavier Marie (3) , A. Bournel (4)

1 LAAS-PHOTO - Équipe Photonique
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
3 LNMO - Laboratoire de Nanophysique Magnétisme et Optoélectronique
4 IEF - Institut d'électronique fondamentale

We present a ringlike design for spin field effect transistor electrodes. This configuration solves the local Hall effect drawback as these electrodes do not generate any stray magnetic fields. The shape and size of the electrodes are adjusted in order to match the physical constraints. The gate configuration and channel length are discussed for the [110] growth direction; the GaInAs channel length for the spins to fully switch is calculated to be of the order of 0.15μm for a gate electric field of 150–300kV∕cm

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

Pascal Gallo, Alexandre Arnoult, Thierry Camps, E. Havard, Chantal Fontaine, et al.. Self-aligned and stray-field-free electrodes for spintronics: An application to a spin field effect transistor. Journal of Applied Physics, 2007, 101 (2), pp.024322. ⟨10.1063/1.2422710⟩. ⟨hal-02452598⟩