Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment

Marie-Laure Locatelli (1) , Karine Isoird (1) , Sorin Dinculescu (1) , Vincent Bley (1) , Thierry Lebey (1) , Dominique Planson (2, 3) , Michel Mermet-Guyennet (4) , E. Dutarde (4)

1 LGET - Laboratoire de génie électrique de Toulouse
2 CEGELY - Centre de génie électrique de Lyon
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon
4 Alstom Transport - Alstom Transport

Due to more severe operating condition (higher electric field, higher temperature,…), power electronics trends require to consider more accurately the dielectric environment of the semiconductor. The use of possible alternative semiconductors adds reason for such studies. Maximum electric field stress, relative dielectric permittivity and energy band gap properties, theoretically required for the SiC device passivation, are discussed. Advantages and drawbacks of high dielectric permittivity materials for passivation are emphasized. Then, a new 50 kV / 500°C experimental setup allowing their precise characterization once the test-vehicles chosen, is presented in the paper.

Mots clés: Power Semiconductor Devices; Silicon Carbide; Simulation; Device Characterisation; Packaging; Reliability

Domaines: Energie électrique

Marie-Laure Locatelli, Karine Isoird, Sorin Dinculescu, Vincent Bley, Thierry Lebey, et al.. Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment. 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France. ⟨hal-02492270⟩