A model of GTO compatible with power circuit simulation

Corinne Alonso (1) , Thierry Meynard (1) , Henri Foch (1) , Christophe Batard (1) , Hubert Piquet (1)

1 LEEI - Laboratoire électrotechnique et électronique industrielle

In the field of power device simulation, different approaches can be found. The authors' purpose is to find models able to represent both the static and dynamic behaviour of semiconductors taking account of the external circuit (in chopper or inverter operation). These models should be of the `circuit' type to be compatible with simulation software capable of handling whole converters, like, in this case, SUCCESS. The models for minority carrier devices are based on their physical structure. Each junction of the component is represented by a standard junction model. The model of each component is then derived as a combination of these junction models. In this paper, the authors focus on the modelling of the GTO which is a three-junction device. First, they identify the parameters of each junction with specific tests which are detailed. Then, the behaviour of the model is compared with experimental results under conventional conditions

Mots clés: component; PN junction; carriers; GTO; modelling; simulation

Domaines: Sciences de l'ingénieur [physics]; Energie électrique; Electronique

Corinne Alonso, Thierry Meynard, Henri Foch, Christophe Batard, Hubert Piquet. A model of GTO compatible with power circuit simulation. 5th European Conference on Power Electronics and Applications, EPE'93, Sep 1993, Brighton, United Kingdom. ⟨hal-02523157⟩