Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology

Nathalie Prud'Homme (1) , Vassilios Constantoudis (2) , Asiya E Turgambaeva (3) , Vladislav Krisyuk (3) , Diane Samélor (4) , François Senocq (4) , Constantin Vahlas (4)

1 ICMMO - Institut de Chimie Moléculaire et des Matériaux d'Orsay
2 NCSR - National Center for Scientific Research "Demokritos"
3 NIC - Nikolaev Institute of Inorganic Chemistry [Novosibirsk]
4 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

Keywords: Copper(I) cyclopentadienyl triethylphophine Copper Thin films Metal-organic chemical vapor deposition Coalescence Nucleation Morphology Image analysis A B S T R A C T The rough, even discontinuous morphology of vapor-deposited copper films inhibits their attractive electrical properties. In the present study, we investigate the influence of deposition time, deposition temperature, and the flow rate of the precursors on the morphology of Cu films deposited from metalorganic chemical vapor de-position. We show that it is necessary to purify the copper(I) cyclopentadienyl triethylphophine (CpCuPEt 3) precursor in order to improve its stability and volatility. We also determined its saturated vapor pressure law, logP sat (Pa) = 8.614-2272/T (K). The Arrhenius plot of the global deposition reaction of Cu films in the presence of hydrogen between 431 and 523 K shows a low apparent activation energy of 10 kJ/mol. Electron probe microanalysis, grazing incidence X-Ray diffraction, and image analysis of the micrographs obtained by top-down surface scanning electron microscopy reveal metallic films composed of Cu islands. Their size and packed density increase and, ultimately, the islands coalesce with increasing precursor flow rate and, to a lesser extent, with increasing deposition temperature.

Domaines: Matériaux

Nathalie Prud'Homme, Vassilios Constantoudis, Asiya E Turgambaeva, Vladislav Krisyuk, Diane Samélor, et al.. Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology. Thin Solid Films, 2020, ⟨10.1016/j.tsf.2020.137967⟩. ⟨hal-02558375⟩