Opposition Method based test bench for characterization of SiC Dual MOSFET Modules
Résumé
Silicon Carbide (SiC) technology is pushing the limits of switching devices in three directions: higher blocking voltage, higher operating temperature and higher switching speed. Nowa-days, samples of Silicon Carbide (SiC) MOSFET modules are available on the market. To evaluate the interest of these new devices in railway applications a first set of measurements, based on a single pulse test bench, was achieved. To complete this work, the authors pro-pose to use the opposition method to compare Si IGBT and SiC MOSFET modules in a volt-age source inverter (VSI) operation. For this purpose, a test bench, allowing electrical and thermal measurements, was developed. Experimental results confirm the theoretical losses calculation coming from the single pulse tests.