Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs

Chaymaa Haloui (1) , Toulon Gaëtan (2) , Josiane Tasselli (1) , Yvon Cordier (3) , Éric Frayssinet (3) , Karine Isoird (1) , Frédéric Morancho (1) , Mathieu Gavelle (4)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 Exagan
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 DOCC - CEA Tech Occitanie

A new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode. A shift in the threshold voltage to positive values has been proved through simulation results. A precise control of the etch depth for the gate recess is detailed.

Domaines: Micro et nanotechnologies/Microélectronique

Chaymaa Haloui, Toulon Gaëtan, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, et al.. Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs. 28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland. ⟨hal-02922723⟩