Rational Engineering of the Dielectric Properties of Thin Silica Layers with a Single Plane of AgNPs

Charles Rigoudy (1) , Kremena Makasheva (2) , Mohamed Belhaj (1) , Sarah Dadouch (1) , G. Teyssedre (3) , Laurent Boudou (3)

1 DPHY, ONERA, Université de Toulouse [Toulouse]
2 LAPLACE-ScIPRA - Sciences et Ingénierie des Plasmas Réactifs et des Arcs
3 LAPLACE-DSF - Diélectriques Solides et Fiabilité

Interface properties of dielectrics are of outmost importance when dealing with phenomena as charge injection or secondary electron emission. When the dielectric thickness scales down to the nm range, a deviation from the bulk material properties occurs; therefore, a possibility to tune the surface properties comes by modifying dielectrics at its sub-surface. This paper focuses on the precision of plasma-based processes in order to elaborate thin silica dielectric layers with a single plane of silver nanoparticles (AgNPs) at its sub-surface and thus to control their behavior under electrical stress. An illustration of the modulated properties of such nanostructured dielectrics is given through current measurements and electron emission.

Domaines: Sciences de l'ingénieur [physics]

Charles Rigoudy, Kremena Makasheva, Mohamed Belhaj, Sarah Dadouch, G. Teyssedre, et al.. Rational Engineering of the Dielectric Properties of Thin Silica Layers with a Single Plane of AgNPs. IEEE Internat. Conf. on Dielectrics (ICD), Valencia, Spain, 5-9 July 2020, Jul 2020, Valencia, Spain. pp. 205-208. ⟨hal-03003165⟩