High temperature operation of a monolithic bidirectional diamond switch

Cédric Masante (1) , Julien Pernot (1) , Aurélien Maréchal (2) , Nicolas C. Rouger (3)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 G2ELab - Laboratoire de Génie Electrique de Grenoble
3 LAPLACE-CS - Convertisseurs Statiques

We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm −3 and an Al 2 O 3 gate oxide thickness of 50 nm. The I st and III rd quadrants transistor characteristics are successfully measured by controlling the channel conductivity with both gates separately, with a clear ON and OFF state. A threshold voltage around 35 V is obtained with a low minimum gate leakage current of 1.00 × 10 −4 mA/mm at a gate-source bias V GS = 50 V. The bidirectional switch is then obtained by operating the MOSFET in the I st quadrant of each gate setup. This first proof of concept offers a reverse conducting and reverse blocking diamond MOSFET, with only one drift region layer.

Mots clés: Diamond; Electrical properties characterization; High power electronics; MOS-FET; Bidirectional

Domaines: Energie électrique; Micro et nanotechnologies/Microélectronique

Cédric Masante, Julien Pernot, Aurélien Maréchal, Nicolas C. Rouger. High temperature operation of a monolithic bidirectional diamond switch. Diamond and Related Materials, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩. ⟨hal-03017013⟩