Resistance Switching in Large-Area Vertical Junctions of the Molecular Spin Crossover Complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF Ratios and Device Stability

Yuteng Zhang (1, 2) , Isabelle Séguy (2) , Karl Ridier (1) , Victoria Shalabaeva (1) , Mario Piedrahita-Bello (1) , Aurelian Rotaru (3) , Lionel Salmon (1) , Gábor Molnár (1) , Azzedine Bousseksou (1)

1 LCC - Laboratoire de chimie de coordination
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
3 USU - University Stefan cel Mare of Suceava

Multilayer crossbar junctions composed of ITO/[Fe(HB(1,2,4-triazol-1-yl)3)2]/M (with M = Al or Ca) were fabricated and investigated for their resistance switching properties. Currentvoltage-temperature maps revealed ON/OFF resistance ratios as high as 400, with the ON and OFF states defined, respectively, as the low-resistance, low spin state and the high-resistance, high spin state of the spin crossover layer. Similar results were obtained with Al and Ca cathodes indicating that the charge transport in the insulating spin crossover film is at the origin of the resistance switching instead of electron injection at the electrodes. The reproducibility and stability of the device properties were also studied.

Mots clés: spin crossover; multilayer junctions; resistance switching

Domaines: Micro et nanotechnologies/Microélectronique

Yuteng Zhang, Isabelle Séguy, Karl Ridier, Victoria Shalabaeva, Mario Piedrahita-Bello, et al.. Resistance Switching in Large-Area Vertical Junctions of the Molecular Spin Crossover Complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF Ratios and Device Stability. Journal of Physics: Condensed Matter, 2020, 32 (21), pp.214010. ⟨10.1088/1361-648X/ab741e⟩. ⟨hal-03019003⟩