Undoped SiGe material calibration for numerical nanosecond laser annealing simulations

Anne-Sophie Royet (1) , L. Dagault (1) , Sebastien Kerdiles (1) , Pablo Acosta Alba (1) , J.P P Barnes (1) , Fuccio Cristiano (2) , K. Huet (3)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
3 SCREEN-LASSE

Physical parameters calibration (dielectric and alloy properties) of Si1-XGeX alloys is presented in order to simulate the Ultra Violet-Nanosecond Laser Annealing (UV-NLA) of this material for Si/ Si1-XGeX based MOS devices. Optical and physical parameters are extracted and modeled from experimental characterizations for several Ge concentrations and then fitted to match experimental laser annealing results. A good prediction, in terms of melt depth and melting duration, is achieved for different Ge concentrations between 20 and 40%, usually encountered in Si1-XGeX CMOS integration process.

Mots clés: Laser annealing; melt depth; SiGe alloy characterization

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

Anne-Sophie Royet, L. Dagault, Sebastien Kerdiles, Pablo Acosta Alba, J.P P Barnes, et al.. Undoped SiGe material calibration for numerical nanosecond laser annealing simulations. SISPAD International Conference on Simulation of Semiconductor Processes and Devices, Sep 2020, VIRTUAL CONFERENCE, Japan. ⟨10.23919/SISPAD49475.2020.9241664⟩. ⟨hal-03097960⟩