Search - Université Toulouse III - Paul Sabatier

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	hal-01922894v1 Journal articles E. Bazizi, P Fazzini, A. Pakfar, C. Tavernier, B. Vandelle et al. Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator Journal of Applied Physics, American Institute of Physics, 2010, 107 (7), pp.074503. ⟨10.1063/1.3369160⟩
	hal-01435138v1 Journal articles Zahi Essa, B. Pelletier, P. Morin, P. Boulenc, A. Pakfar et al. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩
	hal-01921905v1 Journal articles Z. Essa, C. Gaumer, A. Pakfar, M. Gros-Jean, M. Juhel et al. Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks Applied Physics Letters, American Institute of Physics, 2012, 101 (18), pp.182901. ⟨10.1063/1.4764558⟩
	hal-01633467v1 Journal articles Pier-Francesco Fazzini, Fuccio Cristiano, Etienne Talbot, Gérard Benassayag, S. Paul et al. Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium Thin Solid Films, Elsevier, 2010, 518 (9), pp.2338 - 2341. ⟨10.1016/j.tsf.2009.09.172⟩
	hal-01922678v1 Journal articles E. Bazizi, A. Pakfar, P Fazzini, Fuccio Cristiano, C. Tavernier et al. Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs Thin Solid Films, Elsevier, 2010, 518 (9), pp.2427 - 2430. ⟨10.1016/j.tsf.2009.09.141⟩
		Relevance Author A→Z Author Z→A Title A→Z Title Z→A Date de publication croissante Date de publication décroissante Date de dépôt croissante Date de dépôt décroissante 30 results per page 50 results per page 100 results per page o Export XML-TEI BibTeX EndNote CSV PDF RTF Advanced export... Syndicated feeds RSS ATOM