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hal-02052796v1  Conference papers
Andrea BalocchiSawsen AzaiziaHélène CarrèreThierry AmandAlexandre Arnoult et al.  Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
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hal-00003590v1  Journal articles
Guillaume BachelierAdnen MlayahM. CazayousJesse GroenenAntoine Zwick et al.  Resonant Raman scattering in GaAsN: Mixing, localization and band impurity formation of electronic states
Physical Review B : Condensed matter and materials physics, American Physical Society, 2003, 67, pp.205325
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hal-02281696v1  Journal articles
Clara CornilleAlexandre ArnoultQuentin GravelierChantal Fontaine. Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurements
Journal of Applied Physics, American Institute of Physics, 2019, Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (9), pp.093106. ⟨10.1063/1.5111932⟩
hal-02296303v1  Conference papers
Stéphane CalvezGael LafleurOleksandr StepanenkoAlexandre ArnoultAntoine Monmayrant et al.  Controlled Oxidation of III-V Semiconductors for Photonic Devices
21st International Conference on Transparent Optical Networks (ICTON 2019), Jul 2019, Angers, France. pp.1-4, ⟨10.1109/ICTON.2019.8840290⟩
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hal-01741465v1  Journal articles
Clément ArlottiGael LafleurAlexandre LarruePierre-François CalmonAlexandre Arnoult et al.  Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonators
IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers, 2018, 54 (3), ⟨10.1109/JQE.2018.2811739⟩
hal-01857640v1  Journal articles
Kevin LouarnChantal FontaineAlexandre ArnoultFrançois OlivieGuy Lacoste et al.  Modelling of interband transitions in GaAs tunnel diode
Semiconductor Science and Technology, IOP Publishing, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
hal-01947272v1  Conference papers
Ömer DönmezK. KaraAyse ErolE. AkalinHajer Makhloufi et al.  Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys
8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
hal-01947318v1  Conference papers
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing
5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947255v1  Conference papers
Hélène CarrèreAndrea BalocchiXavier MarieAlexandre ArnoultChantal Fontaine. Spin properties of dilute bismide alloys
The Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom
hal-01947354v1  Poster communications
Hajer MakhloufiPoonyasiri BoonpengSimone MazzucatoHélène CarrèreT.T. Zhang et al.  Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014