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hal-01980741v1  Journal articles
Cédric RobertD. LagardeF. CadizG. WangBenjamin Lassagne et al.  Exciton radiative lifetime in transition metal dichalcogenide monolayers
Physical Review B : Condensed matter and materials physics, American Physical Society, 2016, 93 (20), ⟨10.1103/physrevb.93.205423⟩
hal-02052762v1  Journal articles
G. WangI.C. GerberL. BouetD. LagardeAndrea Balocchi et al.  Exciton states in monolayer MoSe 2 : impact on interband transitions
2D Materials, IOP Publishing, 2015, 2 (4), pp.045005
hal-02050943v1  Journal articles
M. GlazovThierry AmandXavier MarieD. LagardeL. Bouet et al.  Exciton fine structure and spin decoherence in monolayers of transition metal dichalcogenides
Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 89 (20)
hal-02052132v1  Journal articles
G. WangL. BouetD. LagardeM. VidalAndrea Balocchi et al.  Valley dynamics probed through charged and neutral exciton emission in monolayer WSe 2
Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 90 (7)
hal-02050447v1  Journal articles
M. DurnevM. GlazovE. IvchenkoM. JoT. Mano et al.  Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
Physical Review B : Condensed matter and materials physics, American Physical Society, 2013, 87 (8)
hal-02056578v1  Journal articles
Cédric RobertThierry AmandF. CadizD. LagardeE. Courtade et al.  Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers
Physical Review B : Condensed matter and materials physics, American Physical Society, 2017, 96 (15)
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hal-01968908v1  Journal articles
Cédric RobertR. PicardD. LagardeG. WangJ. Echeverry et al.  Excitonic properties of semiconducting monolayer and bilayer MoT e 2
Physical Review B : Condensed matter and materials physics, American Physical Society, 2016, 94 (15), ⟨10.1103/physrevb.94.155425⟩
hal-02050950v1  Journal articles
D. LagardeL. BouetXavier MarieC. ZhuL. Liu et al.  Carrier and Polarization Dynamics in Monolayer MoS 2
Physical Review Letters, American Physical Society, 2014, 112 (4)
hal-02053976v1  Journal articles
F. CadizD. LagardePierre RenucciD. PagetThierry Amand et al.  Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density
Applied Physics Letters, American Institute of Physics, 2017, 110 (8), pp.082101
hal-02052136v1  Journal articles
G. WangXavier MarieL. BouetM. VidalAndrea Balocchi et al.  Exciton dynamics in WSe 2 bilayers
Applied Physics Letters, American Institute of Physics, 2014, 105 (18), pp.182105
hal-02050686v1  Journal articles
G. WangAndrea BalocchiD. LagardeC. ZhuThierry Amand et al.  Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells
Applied Physics Letters, American Institute of Physics, 2013, 102 (24), pp.242408
hal-02050545v1  Journal articles
S. MazzucatoT. ZhangH. CarrèreD. LagardePoonyasiri Boonpeng et al.  Electron spin dynamics and g-factor in GaAsBi
Applied Physics Letters, American Institute of Physics, 2013, 102 (25), pp.252107. ⟨10.1063/1.4812660⟩
hal-02050556v1  Journal articles
C. NguyenAndrea BalocchiD. LagardeT. ZhangH. Carrère et al.  Fabrication of an InGaAs spin filter by implantation of paramagnetic centers
Applied Physics Letters, American Institute of Physics, 2013, 103 (5), pp.052403
hal-02345435v1  Journal articles
F. CadizD. LagardeP. RenucciD. PagetT. Amand et al.  Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density
Applied Physics Letters, American Institute of Physics, 2017, 110 (8), pp.082101. ⟨10.1063/1.4977003⟩