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hal-01736096v1  Journal articles
Fuccio CristianoNikolay CherkashinP. CalvoY. LamraniXavier Hebras et al.  Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
hal-01736106v1  Conference papers
S. PaulW. LerchXavier HebrasNikolay CherkashinFuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
hal-01736121v1  Journal articles
B. BayhaS. PaulW. LerchD.F. DowneyE.A. Arevalo et al.  Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime
Proceedings of the International Conference on Ion Implantation Technology, 2002, 22-27-September-2002, pp.618-621. ⟨10.1109/IIT.2002.1258081⟩
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hal-02099850v1  Conference papers
Philippe MeniniHabib ChalabiP. YobouéE. ScheidVéronique Conédéra et al.  High performances of new microhotplate for gas sensors
22nd European Conference on Solid state Transducers (EUROSENSORS XXII), Sep 2008, DRESDEN, Germany
hal-01736070v1  Journal articles
Xavier HebrasP. NguyenK.K. BourdelleF. LetertreNikolay Cherkashin et al.  Comparison of platelet formation in hydrogen and helium-implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩
hal-01736101v1  Journal articles
Fuccio CristianoNikolay CherkashinXavier HebrasP. CalvoY. Lamrani et al.  Ion beam induced defects in crystalline silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
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hal-01736115v1  Journal articles
Fuccio CristianoXavier HebrasNikolay CherkashinAlain ClaverieW. Lerch et al.  Clusters formation in ultralow-energy high-dose boron-implanted silicon
Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩