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	hal-01867595v1 Conference papers Éric Imbernon, Emmanuel Scheid, Françoise Rossel, Marie Breil, H Carrière et al. RÉALISATION DE MURS P + TRAVERSANTS POUR DES FONCTIONS DE PUISSANCE INTÉGRÉES Seminario Annual de Automatica, Electronica Industrial e Instrumentacion. Electronique de Puissance du Futur (SAAEI-EPF'04), Sep 2004, Toulouse, France. 4p
	hal-01753123v1 Journal articles Gulaim Seisenbaeva, Suresh Gohil, Vadim Kessler, Michel Andrieux, Corinne Legros et al. Controlling precursor stability and evaporation through molecular design. Pseudo single source precursor approach to MOCVD SrTiO3 thin films Applied Surface Science, Elsevier, 2011, 257 (6), pp.2281 - 2290. ⟨10.1016/j.apsusc.2010.09.090⟩
	hal-02396239v1 Journal articles Georgios Gakis, Constantin Vahlas, Hugues Vergnes, Sandrine Dourdain, Yann Tison et al. Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al 2 O 3 on Si Applied Surface Science, Elsevier, 2019, 492, pp.245 - 254. ⟨10.1016/j.apsusc.2019.06.215⟩
	hal-01730674v1 Preprints, Working Papers, ... Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba et al. A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers 2018
	hal-01730196v1 Journal articles Giorgos Gakis, Hugues Vergnes, Emmanuel Scheid, Constantin Vahlas, Brigitte Caussat et al. Computational fluid dynamics simulation of the ALD of alumina from TMA and H2O in a commercial reactor Chemical Engineering Research and Design, Elsevier, 2018, 132, pp.795-811. ⟨10.1016/j.cherd.2018.02.031⟩
	hal-02329135v1 Journal articles Georgios Gakis, Hugues Vergnes, Emmanuel Scheid, Constantin Vahlas, Andreas Boudouvis et al. Detailed investigation of the surface mechanisms and their interplay with transport phenomena in alumina atomic layer deposition from TMA and water Chemical Engineering Science, Elsevier, 2019, 195, pp.399-412. ⟨10.1016/j.ces.2018.09.037⟩
	hal-02099873v2 Conference papers P. Yoboué, Philippe Menini, Habib Chalabi, Véronique Conédéra, Ludovic Salvagnac et al. Development of a Micro-hotplate for different Metal Oxide Gas Sensors with High Operating Temperatures MICROMECHANICS EUROPE 2007, Sep 2007, Guimaraes, Portugal. pp.191-194
	hal-01735436v1 Conference papers Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba et al. Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
	hal-01871410v1 Conference papers Ahmet Lale, Auriane Grappin, Emmanuel Scheid, Jérôme Launay, Pierre Temple-Boyer. Design, realization and characterization of silicon nanowire ion sensitive field effect transistors IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2016, Oct 2016, Toulouse, France. 2p., ⟨10.1109/NMDC.2016.7777159⟩
	hal-02087150v1 Conference papers H. Chalabi, Philippe Menini, Emmanuel Scheid, Ludovic Salvagnac, Véronique Conédéra et al. Development of integrated smart nose based on WO3 gas sensors Eurosensors XX, Sep 2006, Göteborg, Sweden
	hal-01511365v2 Journal articles Pierre Temple-Boyer, Bernard Rousset, Emmanuel Scheid. Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane Thin Solid Films, Elsevier, 2010, 518 (23), pp.6897-6903. ⟨10.1016/j.tsf.2010.07.037⟩
	hal-01922678v1 Journal articles E. Bazizi, A. Pakfar, P Fazzini, Fuccio Cristiano, C. Tavernier et al. Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs Thin Solid Films, Elsevier, 2010, 518 (9), pp.2427 - 2430. ⟨10.1016/j.tsf.2009.09.141⟩
	hal-02043421v1 Journal articles Ahmet Lale, Emmanuel Scheid, Fuccio Cristiano, Lucien Datas, Benjamin Reig et al. Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties Thin Solid Films, Elsevier, 2018, 666, pp.20 - 27. ⟨10.1016/j.tsf.2018.09.028⟩
	hal-01921179v1 Journal articles Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot et al. A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩
	hal-02983939v1 Journal articles L. Dagault, S. Kerdilès, P Acosta-Alba, J.-M. Hartmann, J.-P. Barnes et al. Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers Applied Surface Science, Elsevier, 2020, 527, pp.146752. ⟨10.1016/j.apsusc.2020.146752⟩
	hal-03098053v1 Preprints, Working Papers, ... Richard Monflier, Toshiyuki Tabata, Hiba Rizk, Julien Roul, Karim Huet et al. Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities 2021
	hal-01745028v1 Journal articles Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, Michaële Herbst-Ghysel, Isabelle Gallet et al. ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.1121-1128. ⟨10.1149/1.3207715⟩
	hal-01443083v1 Journal articles Magali Brunet, Hicham Mafhoz Kotb, Laurent Bouscayrol, Emmanuel Scheid, Michel Andrieux et al. Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors Thin Solid Films, Elsevier, 2011, 519 (16), pp.5638-5644. ⟨10.1016/j.tsf.2011.03.006⟩
	hal-01443057v1 Journal articles Magali Brunet, Emmanuel Scheid, Karolina Galicka-Fau, Michel Andrieux, Corinne Legros et al. Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials Microelectronic Engineering, Elsevier, 2009, 86 (10), pp.2034-2037. ⟨10.1016/j.mee.2009.01.034⟩
	hal-01730652v1 Conference papers Richard Daubriac, Mahmoud Abou Daher, Fuccio Cristano, Emmanuel Scheid, S. Joblot et al. Differential hall characterization of shallow strained SiGe layers 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩
	hal-02396236v1 Journal articles Georgios Gakis, Hugues Vergnes, Fuccio Cristiano, Yann Tison, Constantin Vahlas et al. Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD Journal of Applied Physics, American Institute of Physics, 2019, 126 (12), pp.125305. ⟨10.1063/1.5113755⟩
	hal-01719500v1 Journal articles François-Xavier Darras, Nikolay Cherkashin, Fuccio Cristiano, Emmanuel Scheid, Oleg Kononchuk et al. Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
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