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hal-02043421v1  Journal articles
Ahmet Lale, Emmanuel Scheid, Fuccio Cristiano, Lucien Datas, Benjamin Reig et al.  Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties
Thin Solid Films, Elsevier, 2018, 666, pp.20 - 27. ⟨10.1016/j.tsf.2018.09.028⟩
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hal-01443083v1  Journal articles
Magali Brunet, Hicham Mafhoz Kotb, Laurent Bouscayrol, Emmanuel Scheid, Michel Andrieux et al.  Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors
Thin Solid Films, Elsevier, 2011, 519 (16), pp.5638-5644. ⟨10.1016/j.tsf.2011.03.006⟩
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hal-01511365v2  Journal articles
Pierre Temple-Boyer, Bernard Rousset, Emmanuel Scheid. Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane
Thin Solid Films, Elsevier, 2010, 518 (23), pp.6897-6903. ⟨10.1016/j.tsf.2010.07.037⟩
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hal-02099873v2  Conference papers
P. Yoboué, Philippe Menini, Habib Chalabi, Véronique Conédéra, Ludovic Salvagnac et al.  Development of a Micro-hotplate for different Metal Oxide Gas Sensors with High Operating Temperatures
MICROMECHANICS EUROPE 2007, Sep 2007, Guimaraes, Portugal. pp.191-194
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hal-01871410v1  Conference papers
Ahmet Lale, Auriane Grappin, Emmanuel Scheid, Jérôme Launay, Pierre Temple-Boyer. Design, realization and characterization of silicon nanowire ion sensitive field effect transistors
IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2016, Oct 2016, Toulouse, France. 2p., ⟨10.1109/NMDC.2016.7777159⟩
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hal-01867595v1  Conference papers
Éric Imbernon, Emmanuel Scheid, Françoise Rossel, Marie Breil, H Carrière et al.  RÉALISATION DE MURS P + TRAVERSANTS POUR DES FONCTIONS DE PUISSANCE INTÉGRÉES
Seminario Annual de Automatica, Electronica Industrial e Instrumentacion. Electronique de Puissance du Futur (SAAEI-EPF'04), Sep 2004, Toulouse, France. 4p
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hal-01735436v1  Conference papers
Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba et al.  Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
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hal-01730196v1  Journal articles
Giorgos Gakis, Hugues Vergnes, Emmanuel Scheid, Constantin Vahlas, Brigitte Caussat et al.  Computational fluid dynamics simulation of the ALD of alumina from TMA and H2O in a commercial reactor
Chemical Engineering Research and Design, Elsevier, 2018, 132, pp.795-811. ⟨10.1016/j.cherd.2018.02.031⟩
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hal-01730674v1  Preprints, Working Papers, ...
Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba et al.  A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers
2018
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hal-02396239v1  Journal articles
Georgios Gakis, Constantin Vahlas, Hugues Vergnes, Sandrine Dourdain, Yann Tison et al.  Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al 2 O 3 on Si
Applied Surface Science, Elsevier, 2019, 492, pp.245 - 254. ⟨10.1016/j.apsusc.2019.06.215⟩
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hal-02087150v1  Conference papers
H. Chalabi, Philippe Menini, Emmanuel Scheid, Ludovic Salvagnac, Véronique Conédéra et al.  Development of integrated smart nose based on WO3 gas sensors
Eurosensors XX, Sep 2006, Göteborg, Sweden
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hal-01443057v1  Journal articles
Magali Brunet, Emmanuel Scheid, Karolina Galicka-Fau, Michel Andrieux, Corinne Legros et al.  Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials
Microelectronic Engineering, Elsevier, 2009, 86 (10), pp.2034-2037. ⟨10.1016/j.mee.2009.01.034⟩
hal-01730652v1  Conference papers
Richard Daubriac, Mahamoud Abou Daher, Fuccio Cristano, Emmanuel Scheid, S. Joblot et al.  Differential hall characterization of shallow strained SiGe layers
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩
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hal-01921179v1  Journal articles
Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot et al.  A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩
hal-01719500v1  Journal articles
François-Xavier Darras, Nikolay Cherkashin, Fuccio Cristiano, Emmanuel Scheid, Oleg Kononchuk et al.  Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
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hal-02396236v1  Journal articles
Georgios Gakis, Hugues Vergnes, Fuccio Cristiano, Yann Tison, Constantin Vahlas et al.  Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD
Journal of Applied Physics, American Institute of Physics, 2019, 126 (12), pp.125305. ⟨10.1063/1.5113755⟩

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