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inria-00000728v1
Conference papers
Propriétés électriques des diodes Schottky en Polymères MajecSTIC 2005 : Manifestation des Jeunes Chercheurs francophones dans les domaines des STIC, IRISA – IETR – LTSI, Nov 2005, Rennes, pp.116-122 |
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hal-03012605v1
Journal articles
Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, In press |
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hal-02138065v1
Journal articles
Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2002, 187 (2), pp.201-206. ⟨10.1016/S0168-583X(01)00928-4⟩ |
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hal-01343977v1
Conference papers
I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies European Microwave Integrated Circuits Conference (EuMIC 2011), Oct 2011, Manchester, United Kingdom. pp.438-441 |
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hal-02138197v1
Journal articles
Simplex Algorithm for Deep-Level Transient Spectroscopy: Simplex-DLTS Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2004, 43 (11A), pp.7376-7380. ⟨10.1143/JJAP.43.7376⟩ |
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hal-02138244v1
Journal articles
Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2004, 43 (11A), pp.7572-7575. ⟨10.1143/JJAP.43.7572⟩ |
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hal-01436488v1
Conference papers
Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩ |
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