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hal-01857568v1  Conference papers
Kevin LouarnAlexandre BounouhChantal FontaineFrançois OlivieGuillaume Libaude et al.  III-V based Heterojunction Tunnel for Multijunction Solar Cells
PULSE summer school : Epitaxy promises and updates, Porquerolles (France), Septembre 2015, Sep 2015, Porquerolles, France
hal-01610933v1  Conference papers
Kevin LouarnYann ClaveauAlexandre ArnoultChantal FontaineJonathan Colin et al.  Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïques
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France
hal-01780605v1  Poster communications
Kevin LouarnYann ClaveauChantal FontaineAlexandre ArnoultFrançois Piquemal et al.  Modélisation semi­classique du courant tunnel inter­bandes dans les jonctions tunnel GaAs
Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017
hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01721161v1  Journal articles
Fares ChouchaneGuilhem AlmuneauNikolay CherkashinAlexandre ArnoultGuy Lacoste et al.  Local stress-induced effects on AlGaAs/AlOx oxidation front shape
Applied Physics Letters, American Institute of Physics, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩
hal-02050545v1  Journal articles
S. MazzucatoT. ZhangH. CarrèreD. LagardePoonyasiri Boonpeng et al.  Electron spin dynamics and g-factor in GaAsBi
Applied Physics Letters, American Institute of Physics, 2013, 102 (25), pp.252107. ⟨10.1063/1.4812660⟩
hal-01947318v1  Conference papers
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing
5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947298v1  Conference papers
Simone MazzucatoH LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Electron g-factor in strained bulk GaAsBi epilayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France
hal-01947411v1  Conference papers
Hélène CarrèreAurélien KuckHajer MakhloufiPoonyasiri BoonpengAlexandre Arnoult et al.  Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys
6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States