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hal-01947354v1  Poster communications
Hajer MakhloufiPoonyasiri BoonpengSimone MazzucatoHélène CarrèreT.T. Zhang et al.  Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
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hal-01768376v1  Poster communications
Stéphane CalvezAlexandre ArnoultPierre-François CalmonAurélie LecestreChantal Fontaine et al.  Buried Waveguides using a Quasi-Planar Process
European Conference on Integrated Optics, Apr 2017, Eindhoven, Netherlands. 2017
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hal-01768308v1  Conference papers
Stéphane CalvezAlexandre ArnoultPierre-François CalmonAurélie LecestreChantal Fontaine et al.  Réalisation de guides d’onde enterrés avec un procédé quasi-planaire
Journées Nationales de l'Optique Guidée (JNOG), Jul 2016, Bordeaux, France. 3p
hal-01855298v1  Conference papers
Guilhem AlmuneauStéphane CalvezGael LafleurChantal FontaineAlexandre Arnoult et al.  Selective oxidation of AlGaAs for confinement in III-V photonic devices
16th NAMIS workshop ” Micro- and nanosystems, large area electronics and biofunctionalities towards novel integrated smart systems“, Jun 2018, Oulu, Finland. 36p
hal-01857568v1  Conference papers
Kevin LouarnAlexandre BounouhChantal FontaineFrançois OlivieGuillaume Libaude et al.  III-V based Heterojunction Tunnel for Multijunction Solar Cells
PULSE summer school : Epitaxy promises and updates, Porquerolles (France), Septembre 2015, Sep 2015, Porquerolles, France
hal-01780605v1  Poster communications
Kevin LouarnYann ClaveauChantal FontaineAlexandre ArnoultFrançois Piquemal et al.  Modélisation semi­classique du courant tunnel inter­bandes dans les jonctions tunnel GaAs
Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017
hal-01947425v1  Poster communications
Chantal FontaineAlexandre ArnoultFuccio CristianoHélène CarrèreSawsen Azaizia et al.  Growth and properties of GaAsBi thin layers by molecular beam epitaxy
International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
hal-01947398v1  Poster communications
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  Spin properties of dilute bismides
18th EuroMBE, Mar 2015, Canazei, Italy. 2015
hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
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hal-02281696v1  Journal articles
Clara CornilleAlexandre ArnoultQuentin GravelierChantal Fontaine. Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurements
Journal of Applied Physics, American Institute of Physics, 2019, Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (9), pp.093106. ⟨10.1063/1.5111932⟩
hal-01947272v1  Conference papers
Ömer DönmezK. KaraAyse ErolE. AkalinHajer Makhloufi et al.  Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys
8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
hal-01947288v1  Conference papers
Sawsen AzaiziaAndrea BalocchiDelphine LagardeAlexandre ArnoultChantal Fontaine et al.  Electron spin polarization in GaAsBi quantum wells: Temperature dependence
8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
hal-01947298v1  Conference papers
Simone MazzucatoH LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Electron g-factor in strained bulk GaAsBi epilayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France