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hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947354v1  Poster communications
Hajer MakhloufiPoonyasiri BoonpengSimone MazzucatoHélène CarrèreT.T. Zhang et al.  Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947318v1  Conference papers
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing
5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947411v1  Conference papers
Hélène CarrèreAurélien KuckHajer MakhloufiPoonyasiri BoonpengAlexandre Arnoult et al.  Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys
6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
hal-01947298v1  Conference papers
Simone MazzucatoH LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Electron g-factor in strained bulk GaAsBi epilayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France
hal-01947332v1  Conference papers
Simone MazzucatoHenri LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Carrier localization and electron spin relaxation dynamics in GaAsBi
5th International Workshop on Bismuth-Containing Semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947398v1  Poster communications
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  Spin properties of dilute bismides
18th EuroMBE, Mar 2015, Canazei, Italy. 2015
hal-01610933v1  Conference papers
Kevin LouarnYann ClaveauAlexandre ArnoultChantal FontaineJonathan Colin et al.  Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïques
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France
hal-01857568v1  Conference papers
Kevin LouarnAlexandre BounouhChantal FontaineFrançois OlivieGuillaume Libaude et al.  III-V based Heterojunction Tunnel for Multijunction Solar Cells
PULSE summer school : Epitaxy promises and updates, Porquerolles (France), Septembre 2015, Sep 2015, Porquerolles, France
hal-01780605v1  Poster communications
Kevin LouarnYann ClaveauChantal FontaineAlexandre ArnoultFrançois Piquemal et al.  Modélisation semi­classique du courant tunnel inter­bandes dans les jonctions tunnel GaAs
Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017