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hal-01343977v1  Conference papers
Jean-Guy TartarinSerge KarboyanFrançois OliviéGuilhem AstreLaurent Bary et al.  I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies
European Microwave Integrated Circuits Conference (EuMIC 2011), Oct 2011, Manchester, United Kingdom. pp.438-441
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inria-00000728v1  Conference papers
Abdelhak AzizKhalil KassmiRabah MaimouniFrançois OliviéGérard Sarrabayrouse et al.  Propriétés électriques des diodes Schottky en Polymères
MajecSTIC 2005 : Manifestation des Jeunes Chercheurs francophones dans les domaines des STIC, IRISA – IETR – LTSI, Nov 2005, Rennes, pp.116-122
hal-01780256v1  Journal articles
Arne BuchterJohannes HoffmannAlexandra DelvalléeEnrico BrinciottiDimitri Hapiuk et al.  Scanning microwave microscopy applied to semiconducting GaAs structures
Review of Scientific Instruments, American Institute of Physics, 2018, 89 (2), pp.023704. ⟨10.1063/1.5015966⟩
hal-01610933v1  Conference papers
Kevin LouarnYann ClaveauAlexandre ArnoultChantal FontaineJonathan Colin et al.  Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïques
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France
hal-01857568v1  Conference papers
Kevin LouarnAlexandre BounouhChantal FontaineFrançois OlivieGuillaume Libaude et al.  III-V based Heterojunction Tunnel for Multijunction Solar Cells
PULSE summer school : Epitaxy promises and updates, Porquerolles (France), Septembre 2015, Sep 2015, Porquerolles, France
hal-01780605v1  Poster communications
Kevin LouarnYann ClaveauChantal FontaineAlexandre ArnoultFrançois Piquemal et al.  Modélisation semi­classique du courant tunnel inter­bandes dans les jonctions tunnel GaAs
Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017
hal-02138244v1  Journal articles
Halima Benchenane-MehorMalika IdrissiMohamed BenzohraFrançois Olivié. Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2004, 43 (11A), pp.7572-7575. ⟨10.1143/JJAP.43.7572⟩
hal-02138197v1  Journal articles
Halima Benchenane-MehorMohamed BenzohraMalika BenzohraFrançois OliviéAbdelkader Saïdane. Simplex Algorithm for Deep-Level Transient Spectroscopy: Simplex-DLTS
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2004, 43 (11A), pp.7376-7380. ⟨10.1143/JJAP.43.7376⟩
hal-01857640v1  Journal articles
Kevin LouarnChantal FontaineAlexandre ArnoultFrançois OlivieGuy Lacoste et al.  Modelling of interband transitions in GaAs tunnel diode
Semiconductor Science and Technology, IOP Publishing, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
hal-02138065v1  Journal articles
Mohamed BenzohraFrançois OliviéMalika BenzohraKaouther KetataMohamed Ketata. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2002, 187 (2), pp.201-206. ⟨10.1016/S0168-583X(01)00928-4⟩