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hal-01857568v1  Conference papers
Kevin LouarnAlexandre BounouhChantal FontaineFrançois OlivieGuillaume Libaude et al.  III-V based Heterojunction Tunnel for Multijunction Solar Cells
PULSE summer school : Epitaxy promises and updates, Porquerolles (France), Septembre 2015, Sep 2015, Porquerolles, France
hal-01857640v1  Journal articles
Kevin LouarnChantal FontaineAlexandre ArnoultFrançois OlivieGuy Lacoste et al.  Modelling of interband transitions in GaAs tunnel diode
Semiconductor Science and Technology, IOP Publishing, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
hal-01780256v1  Journal articles
Arne BuchterJohannes HoffmannAlexandra DelvalléeEnrico BrinciottiDimitri Hapiuk et al.  Scanning microwave microscopy applied to semiconducting GaAs structures
Review of Scientific Instruments, American Institute of Physics, 2018, 89 (2), pp.023704. ⟨10.1063/1.5015966⟩
hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01780605v1  Poster communications
Kevin LouarnYann ClaveauChantal FontaineAlexandre ArnoultFrançois Piquemal et al.  Modélisation semi­classique du courant tunnel inter­bandes dans les jonctions tunnel GaAs
Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017
hal-01610933v1  Conference papers
Kevin LouarnYann ClaveauAlexandre ArnoultChantal FontaineJonathan Colin et al.  Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïques
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France
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hal-01721161v1  Journal articles
Fares ChouchaneGuilhem AlmuneauNikolay CherkashinAlexandre ArnoultGuy Lacoste et al.  Local stress-induced effects on AlGaAs/AlOx oxidation front shape
Applied Physics Letters, American Institute of Physics, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩
hal-01947398v1  Poster communications
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  Spin properties of dilute bismides
18th EuroMBE, Mar 2015, Canazei, Italy. 2015
hal-01947298v1  Conference papers
Simone MazzucatoHenri LehecTiantian ZhangHélène CarrèreDelphine Lagarde et al.  Electron g-factor in strained bulk GaAsBi epilayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France