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hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947318v1  Conference papers
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing
5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947332v1  Conference papers
Simone MazzucatoHenri LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Carrier localization and electron spin relaxation dynamics in GaAsBi
5th International Workshop on Bismuth-Containing Semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947354v1  Poster communications
Hajer MakhloufiPoonyasiri BoonpengSimone MazzucatoHélène CarrèreT.T. Zhang et al.  Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947298v1  Conference papers
Simone MazzucatoH LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Electron g-factor in strained bulk GaAsBi epilayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France
hal-01947411v1  Conference papers
Hélène CarrèreAurélien KuckHajer MakhloufiPoonyasiri BoonpengAlexandre Arnoult et al.  Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys
6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
hal-01947398v1  Poster communications
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  Spin properties of dilute bismides
18th EuroMBE, Mar 2015, Canazei, Italy. 2015
hal-01857640v1  Journal articles
Kevin LouarnChantal FontaineAlexandre ArnoultFrançois OlivieGuy Lacoste et al.  Modelling of interband transitions in GaAs tunnel diode
Semiconductor Science and Technology, IOP Publishing, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
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hal-01721161v1  Journal articles
Fares ChouchaneGuilhem AlmuneauNikolay CherkashinAlexandre ArnoultGuy Lacoste et al.  Local stress-induced effects on AlGaAs/AlOx oxidation front shape
Applied Physics Letters, American Institute of Physics, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩
hal-02050545v1  Journal articles
S. MazzucatoT. ZhangH. CarrèreD. LagardePoonyasiri Boonpeng et al.  Electron spin dynamics and g-factor in GaAsBi
Applied Physics Letters, American Institute of Physics, 2013, 102 (25), pp.252107. ⟨10.1063/1.4812660⟩