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| hal-01910554v1
Conference papers
A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S) |
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| hal-01708282v1
Conference papers
III-V/Si 3D crystal growth: a thermodynamic description Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany |
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| hal-01497064v1
Poster communications
Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on Si European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France |
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| hal-01496666v1
Poster communications
X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon International Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016 |
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| hal-01910556v1
Conference papers
Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S) |
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| hal-01708047v1
Conference papers
(114) GaP surface texturation on Si for water splitting EMRS Spring meeting 2018, Jun 2018, Strasbourg, France |
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| hal-01910543v1
Conference papers
III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation 34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France |
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| hal-01497149v1
Conference papers
Etude de la croissance cohérente de GaP/Si(001) en couche mince Réunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France |
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| hal-01910535v1
Conference papers
A general III-V/Si growth process description European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France |
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| hal-01497144v1
Conference papers
3D GaP/Si(001) growth mode and antiphase boundaries 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France |
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| hal-02048639v1
Conference papers
A universal mechanism to describe III-V epitaxy on Si 20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany |
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| hal-01496758v1
Conference papers
Role of marker layers on antiphase domains in GaP/Si heterostructures Extended Defects in Semiconductors (EDS 2016), Sep 2016, Les Issambres, France |
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| hal-02878985v1
Journal articles
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut Physical Review Materials, American Physical Society, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩ |
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| hal-02114792v1
Conference papers
Solar Water Splitting: surface energy engineering of GaP Template on Si European Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States |
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| hal-01909068v1
Conference papers
GaP Template on Si for Solar Water Splitting: surface energy engineering nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain |
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| hal-01803990v1
Journal articles
A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting Advanced Functional Materials, Wiley, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩ |
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| hal-01833206v1
Journal articles
Universal description of III-V/Si epitaxial growth processes Physical Review Materials, American Physical Society, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩ |
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