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hal-01910554v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
hal-01708282v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletTony RohelRozenn Bernard et al.  III-V/Si 3D crystal growth: a thermodynamic description
Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
hal-01497064v1  Poster communications
Ida LucciSimon CharbonnierYanping WangMounib BahriMaxime Vallet et al.  Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on Si
European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
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hal-01496666v1  Poster communications
Yanping WangAntoine LétoublonIda LucciC. CornetV. Favre-Nicolin et al.  X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
International Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016
hal-01910556v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletPascal TurbanYoan Léger et al.  Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
hal-01708047v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletPascal TurbanYoan Léger et al.  (114) GaP surface texturation on Si for water splitting
EMRS Spring meeting 2018, Jun 2018, Strasbourg, France
hal-01910543v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
hal-01497149v1  Conference papers
Ida LucciSimon CharbonnierYanping WangMounib BahriMaxime Vallet et al.  Etude de la croissance cohérente de GaP/Si(001) en couche mince
Réunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
hal-01910535v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A general III-V/Si growth process description
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
hal-01497144v1  Conference papers
Ida LucciSimon CharbonnierYanping WangM. BahriMaxime Vallet et al.  3D GaP/Si(001) growth mode and antiphase boundaries
19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
hal-02048639v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe III-V epitaxy on Si
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
hal-01496758v1  Conference papers
Maxime ValletIda LucciMounib BahriAntoine LétoublonLudovic Largeau et al.  Role of marker layers on antiphase domains in GaP/Si heterostructures
Extended Defects in Semiconductors (EDS 2016), Sep 2016, Les Issambres, France
hal-02114792v1  Conference papers
Laurent PedesseauIda LucciSimon CharbonnierPascal TurbanYoan Léger et al.  Solar Water Splitting: surface energy engineering of GaP Template on Si
European Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
hal-01909068v1  Conference papers
Laurent PedesseauIda LucciSimon CharbonnierMaxime ValletPascal Turban et al.  GaP Template on Si for Solar Water Splitting: surface energy engineering
nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
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hal-01833206v1  Journal articles
Ida LucciSimon CharbonnierLaurent PedesseauM. ValletLaurent Cerutti et al.  Universal description of III-V/Si epitaxial growth processes
Physical Review Materials, American Physical Society, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩