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hal-01216418v1  Conference papers
Brieux DurandAurélie LecestreLaurent MazenqPhilippe MeniniGuilhem Larrieu. Capteurs de gaz à base de nanofils verticaux et ordonnés de silicium
Journées Nationales du Réseau Doctoral en Microélectronique (JNRDM2015), May 2015, Bordeaux, France. 4p
hal-02303763v1  Conference papers
Peter R. WiechaClément MajorelChristian GirardArnaud ArbouetBruno Masenelli et al.  Tailoring electric and magnetic dipole emissions by high-refractive index dielectric nanostructures
10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2019), Jul 2019, Lisbonne, Portugal
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hal-01102388v1  Conference papers
Brice AdelinAlexandre LarrueAurélie LecestrePascal DubreuilYves Rouillard et al.  High aspect ratio deep etching in GaInAsSb/AlGaAsSb system by ICP-RIE plasma
Plasma Etch and Strip in Microtechnology ( PESM ) 2014, May 2014, Grenoble, France
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hal-01102417v1  Conference papers
Brice AdelinQuentin GaimardAlexandre LarrueAurélie LecestrePascal Dubreuil et al.  Dry Etching of High [Al] AlGaAsSb Compounds Using Cl 2 /N 2 /Ar ICP RIE
International Conference on Micro and Nano Engineering ( MNE ) 2014, Sep 2014, Lausanne, Switzerland
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hal-01871397v1  Conference papers
Ahmet LaleAuriane GrappinDavid BourrierLaurent MazenqAurélie Lecestre et al.  Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors
19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2017), Jun 2017, Kaohsiung, Taiwan. 4p., ⟨10.1109/TRANSDUCERS.2017.7994346⟩
hal-02159090v1  Conference papers
Benjamin ReigLaurent MazenqPierre-François CalmonAurélie LecestreJean Baptiste Doucet et al.  New user's training procedure in an open academic platform: LAAS-CNRS example
European Nanofabrication Research Infrastructure Symposium (ENRIS) 2019, Jun 2019, Enschede, Netherlands
hal-01763387v1  Conference papers
Peter WiechaArnaud ArbouetChristian GirardThierry BaronAurélie Lecestre et al.  Enhanced nonlinear optical properties from individual silicon nanowires
Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, Oct 2016, Toulouse, France. pp.121416 - 121416, ⟨10.1109/NMDC.2016.7777139⟩
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hal-01874765v1  Conference papers
Fadhila Sekli-BelaidiWilliam TiddiMatthieu PolverelGabriel LemercierAurélie Lecestre et al.  Integration of ring nanoelectrodes into microwell for the bioelectrochemical analysis in sub-picoliter volumes
18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2015), Jun 2015, Anchorage, AK, United States. 4p., ⟨10.1109/TRANSDUCERS.2015.7181224⟩
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hal-02048921v1  Conference papers
Philippe MeniniBrieux DurandGuilhem LarrieuAudrey ChapelleAurélie Lecestre et al.  Micro and nanotechnology evolution towards vertical Silicon nanowires for ultra-sensitive gas detection
IX International Workshop on Semiconductor Gas Sensors SGS 2015, Dec 2015, Zakopane, Poland
hal-02048342v1  Conference papers
Brieux DurandAurélie LecestreLaurent MazenqPhilippe MeniniGuilhem Larrieu. 3D silicon nanowires sensors for NO2 detection down to ppb levels
2015 MRS Fall Meeting & Exhibit, Nov 2015, Boston, United States
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hal-01326492v1  Conference papers
Aurélie LecestreAziliz LecomteDavid BourrierPascal DubreuilEmeline Descamps et al.  Plasma etching of thick Parylene C for fabrication of biocompatible electrodes
9th Workshop on Plasma Etch and Strip in Microtechnology (PESM2016), May 2016, Grenoble, France
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hal-01610911v1  Conference papers
Ludovic Marigo-LombartAlexandre ArnoultChristophe ViallonStéphane CalvezAurélie Lecestre et al.  Vertical integration of an electro-absorption modulator within a VCSEL device
19th International Conference on Transparent Optical Networks (ICTON 2017), Jul 2017, Girone, Spain. pp.1 - 4, ⟨10.1109/ICTON.2017.8024894⟩
hal-02391594v1  Journal articles
Ludovic Marigo-LombartChristophe ViallonAlexandre RumeauAlexandre ArnoultAurélie Lecestre et al.  Electro-Absorption Modulator Vertically Integrated on a VCSEL: Microstrip-Based High-Speed Electrical Injection on Top of a BCB Layer
Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2019, 37 (15), pp.3861-3868. ⟨10.1109/JLT.2019.2921806⟩